Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
500 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
235 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
370 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.31mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
15.87mm
Typical Gate Charge @ Vgs
150 nC @ 10 V
Height
20.7mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 500V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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BD 2.830
Each (In a Tube of 25) (Exc. Vat)
BD 3.113
Each (In a Tube of 25) (Including VAT)
25
BD 2.830
Each (In a Tube of 25) (Exc. Vat)
BD 3.113
Each (In a Tube of 25) (Including VAT)
25
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
25 - 25 | BD 2.830 | BD 70.750 |
50 - 100 | BD 2.660 | BD 66.500 |
125+ | BD 2.405 | BD 60.125 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
500 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
235 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
370 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.31mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
15.87mm
Typical Gate Charge @ Vgs
150 nC @ 10 V
Height
20.7mm
Minimum Operating Temperature
-55 °C
Product details