Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
500 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
235 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
370 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
150 nC @ 10 V
Width
5.31mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.87mm
Maximum Operating Temperature
+150 °C
Height
20.7mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 500V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
BD 2.624
BD 2.624 Each (Exc. Vat)
BD 2.886
BD 2.886 Each (inc. VAT)
Standard
1
BD 2.624
BD 2.624 Each (Exc. Vat)
BD 2.886
BD 2.886 Each (inc. VAT)
Standard
1
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price |
|---|---|
| 1 - 9 | BD 2.624 |
| 10 - 24 | BD 2.546 |
| 25 - 49 | BD 2.442 |
| 50 - 99 | BD 2.376 |
| 100+ | BD 2.266 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
500 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
235 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
370 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
150 nC @ 10 V
Width
5.31mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.87mm
Maximum Operating Temperature
+150 °C
Height
20.7mm
Minimum Operating Temperature
-55 °C
Product details


