Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
250 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
15.87mm
Typical Gate Charge @ Vgs
63 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.31mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
20.82mm
Product details
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
BD 8.030
BD 1.606 Each (In a Pack of 5) (Exc. Vat)
BD 8.833
BD 1.767 Each (In a Pack of 5) (inc. VAT)
Standard
5
BD 8.030
BD 1.606 Each (In a Pack of 5) (Exc. Vat)
BD 8.833
BD 1.767 Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | BD 1.606 | BD 8.030 |
| 25 - 45 | BD 1.364 | BD 6.820 |
| 50 - 120 | BD 1.204 | BD 6.022 |
| 125 - 245 | BD 1.144 | BD 5.720 |
| 250+ | BD 1.078 | BD 5.390 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
250 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
15.87mm
Typical Gate Charge @ Vgs
63 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.31mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
20.82mm
Product details


