Vishay N-Channel MOSFET, 46 A, 200 V, 3-Pin TO-247AC IRFP260PBF

RS Stock No.: 541-0468Brand: VishayManufacturers Part No.: IRFP260PBF
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

46 A

Maximum Drain Source Voltage

200 V

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

55 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

280 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

15.87mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

230 nC @ 10 V

Width

5.31mm

Transistor Material

Si

Height

20.7mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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N-channel MOSFET,IRFP260 46A 200V 25pcs
P.O.A.1 Tube of 25 (Exc. Vat)
Stock information temporarily unavailable.

BD 34.788

BD 1.392 Each (In a Tube of 25) (Exc. Vat)

BD 38.267

BD 1.531 Each (In a Tube of 25) (inc. VAT)

Vishay N-Channel MOSFET, 46 A, 200 V, 3-Pin TO-247AC IRFP260PBF

BD 34.788

BD 1.392 Each (In a Tube of 25) (Exc. Vat)

BD 38.267

BD 1.531 Each (In a Tube of 25) (inc. VAT)

Vishay N-Channel MOSFET, 46 A, 200 V, 3-Pin TO-247AC IRFP260PBF
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

QuantityUnit pricePer Tube
25 - 25BD 1.392BD 34.788
50 - 100BD 1.320BD 33.000
125+BD 1.199BD 29.975

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  • Download 3D Models, Schematics and Footprints from more than a million products
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N-channel MOSFET,IRFP260 46A 200V 25pcs
P.O.A.1 Tube of 25 (Exc. Vat)

Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

46 A

Maximum Drain Source Voltage

200 V

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

55 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

280 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

15.87mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

230 nC @ 10 V

Width

5.31mm

Transistor Material

Si

Height

20.7mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in
N-channel MOSFET,IRFP260 46A 200V 25pcs
P.O.A.1 Tube of 25 (Exc. Vat)