Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
46 A
Maximum Drain Source Voltage
200 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
280 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
15.87mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
230 nC @ 10 V
Width
5.31mm
Transistor Material
Si
Height
20.7mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
BD 34.788
BD 1.392 Each (In a Tube of 25) (Exc. Vat)
BD 38.267
BD 1.531 Each (In a Tube of 25) (inc. VAT)
25
BD 34.788
BD 1.392 Each (In a Tube of 25) (Exc. Vat)
BD 38.267
BD 1.531 Each (In a Tube of 25) (inc. VAT)
25
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Please check again later.
| Quantity | Unit price | Per Tube |
|---|---|---|
| 25 - 25 | BD 1.392 | BD 34.788 |
| 50 - 100 | BD 1.320 | BD 33.000 |
| 125+ | BD 1.199 | BD 29.975 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
46 A
Maximum Drain Source Voltage
200 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
280 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
15.87mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
230 nC @ 10 V
Width
5.31mm
Transistor Material
Si
Height
20.7mm
Minimum Operating Temperature
-55 °C
Product details



