Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
400 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
280 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
5.31mm
Length
15.87mm
Typical Gate Charge @ Vgs
210 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
20.7mm
Product details
N-Channel MOSFET, 300V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
BD 40.150
BD 1.606 Each (In a Tube of 25) (Exc. Vat)
BD 44.165
BD 1.767 Each (In a Tube of 25) (inc. VAT)
25
BD 40.150
BD 1.606 Each (In a Tube of 25) (Exc. Vat)
BD 44.165
BD 1.767 Each (In a Tube of 25) (inc. VAT)
25
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Tube |
---|---|---|
25 - 25 | BD 1.606 | BD 40.150 |
50 - 100 | BD 1.573 | BD 39.325 |
125+ | BD 1.507 | BD 37.675 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
400 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
280 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
5.31mm
Length
15.87mm
Typical Gate Charge @ Vgs
210 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
20.7mm
Product details