Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
500 V
Series
D Series
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
278 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.31mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
15.87mm
Typical Gate Charge @ Vgs
85 nC @ 10 V
Height
20.82mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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BD 27.625
BD 1.105 Each (In a Tube of 25) (Exc. Vat)
BD 30.387
BD 1.215 Each (In a Tube of 25) (inc. VAT)
25
BD 27.625
BD 1.105 Each (In a Tube of 25) (Exc. Vat)
BD 30.387
BD 1.215 Each (In a Tube of 25) (inc. VAT)
25
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
25 - 25 | BD 1.105 | BD 27.625 |
50 - 100 | BD 1.060 | BD 26.500 |
125+ | BD 0.980 | BD 24.500 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
500 V
Series
D Series
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
278 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.31mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
15.87mm
Typical Gate Charge @ Vgs
85 nC @ 10 V
Height
20.82mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details