Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
500 V
Series
D Series
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
278 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.31mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.87mm
Typical Gate Charge @ Vgs
85 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
20.82mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
BD 2.046
BD 2.046 Each (Exc. Vat)
BD 2.251
BD 2.251 Each (inc. VAT)
Standard
1
BD 2.046
BD 2.046 Each (Exc. Vat)
BD 2.251
BD 2.251 Each (inc. VAT)
Standard
1
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price |
|---|---|
| 1 - 9 | BD 2.046 |
| 10 - 49 | BD 2.024 |
| 50 - 99 | BD 1.996 |
| 100 - 249 | BD 1.942 |
| 250+ | BD 1.886 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
500 V
Series
D Series
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
278 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.31mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.87mm
Typical Gate Charge @ Vgs
85 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
20.82mm
Minimum Operating Temperature
-55 °C
Product details



