Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
600 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
580 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
180 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
70 nC @ 10 V
Width
5.31mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.87mm
Maximum Operating Temperature
+150 °C
Height
20.7mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
BD 2.904
BD 2.904 Each (Exc. Vat)
BD 3.194
BD 3.194 Each (inc. VAT)
Standard
1
BD 2.904
BD 2.904 Each (Exc. Vat)
BD 3.194
BD 3.194 Each (inc. VAT)
Standard
1
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Please check again later.
Quantity | Unit price |
---|---|
1 - 9 | BD 2.904 |
10 - 49 | BD 2.734 |
50 - 99 | BD 2.497 |
100 - 249 | BD 2.387 |
250+ | BD 2.277 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
600 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
580 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
180 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
70 nC @ 10 V
Width
5.31mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.87mm
Maximum Operating Temperature
+150 °C
Height
20.7mm
Minimum Operating Temperature
-55 °C
Product details