Vishay N-Channel MOSFET, 7.8 A, 800 V, 3-Pin TO-247AC IRFPE50PBF

RS Stock No.: 541-1089Brand: VishayManufacturers Part No.: IRFPE50PBFDistrelec Article No.: 17117013
brand-logo
View all in MOSFETs

Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

7.8 A

Maximum Drain Source Voltage

800 V

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.2 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

190 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

15.87mm

Typical Gate Charge @ Vgs

200 nC @ 10 V

Width

5.31mm

Maximum Operating Temperature

+150 °C

Height

20.7mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in
N-channel MOSFET,IRFPE50 7.8A 600V
P.O.A.Each (Exc. Vat)
Stock information temporarily unavailable.

BD 1.408

BD 1.408 Each (Exc. Vat)

BD 1.549

BD 1.549 Each (inc. VAT)

Vishay N-Channel MOSFET, 7.8 A, 800 V, 3-Pin TO-247AC IRFPE50PBF
Select packaging type

BD 1.408

BD 1.408 Each (Exc. Vat)

BD 1.549

BD 1.549 Each (inc. VAT)

Vishay N-Channel MOSFET, 7.8 A, 800 V, 3-Pin TO-247AC IRFPE50PBF
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

QuantityUnit price
1 - 9BD 1.408
10 - 24BD 1.210
25 - 49BD 1.128
50 - 99BD 1.067
100+BD 0.935

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in
N-channel MOSFET,IRFPE50 7.8A 600V
P.O.A.Each (Exc. Vat)

Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

7.8 A

Maximum Drain Source Voltage

800 V

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.2 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

190 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

15.87mm

Typical Gate Charge @ Vgs

200 nC @ 10 V

Width

5.31mm

Maximum Operating Temperature

+150 °C

Height

20.7mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in
N-channel MOSFET,IRFPE50 7.8A 600V
P.O.A.Each (Exc. Vat)