Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
6.7 A
Maximum Drain Source Voltage
900 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.31mm
Typical Gate Charge @ Vgs
200 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Length
15.87mm
Maximum Operating Temperature
+150 °C
Height
20.7mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
BD 0.940
BD 0.940 Each (Exc. Vat)
BD 1.034
BD 1.034 Each (inc. VAT)
1
BD 0.940
BD 0.940 Each (Exc. Vat)
BD 1.034
BD 1.034 Each (inc. VAT)
1
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Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
6.7 A
Maximum Drain Source Voltage
900 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.31mm
Typical Gate Charge @ Vgs
200 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Length
15.87mm
Maximum Operating Temperature
+150 °C
Height
20.7mm
Minimum Operating Temperature
-55 °C
Product details


