Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
3.1 A
Maximum Drain Source Voltage
1000 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
80 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
15.87mm
Width
5.31mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
20.7mm
Product details
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
BD 1.512
BD 1.512 Each (Exc. Vat)
BD 1.663
BD 1.663 Each (inc. VAT)
Standard
1
BD 1.512
BD 1.512 Each (Exc. Vat)
BD 1.663
BD 1.663 Each (inc. VAT)
Standard
1
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Please check again later.
| Quantity | Unit price |
|---|---|
| 1 - 4 | BD 1.512 |
| 5 - 9 | BD 1.485 |
| 10 - 14 | BD 1.474 |
| 15 - 19 | BD 1.458 |
| 20+ | BD 1.441 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
3.1 A
Maximum Drain Source Voltage
1000 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
80 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
15.87mm
Width
5.31mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
20.7mm
Product details


