Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
7.7 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
11 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Width
6.22mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
2.38mm
Product details
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Please check again later.
BD 0.685
Each (In a Pack of 5) (Exc. Vat)
BD 0.753
Each (In a Pack of 5) (Including VAT)
5
BD 0.685
Each (In a Pack of 5) (Exc. Vat)
BD 0.753
Each (In a Pack of 5) (Including VAT)
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | BD 0.685 | BD 3.425 |
50 - 120 | BD 0.650 | BD 3.250 |
125 - 245 | BD 0.480 | BD 2.400 |
250 - 495 | BD 0.445 | BD 2.225 |
500+ | BD 0.400 | BD 2.000 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
7.7 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
11 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Width
6.22mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
2.38mm
Product details