Vishay N-Channel MOSFET, 3.1 A, 400 V, 3-Pin DPAK IRFR320TRPBF

RS Stock No.: 812-0626Brand: VishayManufacturers Part No.: IRFR320TRPBF
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

3.1 A

Maximum Drain Source Voltage

400 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.8 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

42 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.22mm

Number of Elements per Chip

1

Length

6.73mm

Typical Gate Charge @ Vgs

20 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

2.38mm

Product details

N-Channel MOSFET, 300V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Stock information temporarily unavailable.

BD 3.410

BD 0.341 Each (In a Pack of 10) (Exc. Vat)

BD 3.751

BD 0.375 Each (In a Pack of 10) (inc. VAT)

Vishay N-Channel MOSFET, 3.1 A, 400 V, 3-Pin DPAK IRFR320TRPBF
Select packaging type

BD 3.410

BD 0.341 Each (In a Pack of 10) (Exc. Vat)

BD 3.751

BD 0.375 Each (In a Pack of 10) (inc. VAT)

Vishay N-Channel MOSFET, 3.1 A, 400 V, 3-Pin DPAK IRFR320TRPBF
Stock information temporarily unavailable.
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QuantityUnit pricePer Pack
10 - 90BD 0.341BD 3.410
100 - 240BD 0.319BD 3.190
250 - 490BD 0.314BD 3.135
500 - 990BD 0.280BD 2.805
1000+BD 0.270BD 2.695

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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

3.1 A

Maximum Drain Source Voltage

400 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.8 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

42 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.22mm

Number of Elements per Chip

1

Length

6.73mm

Typical Gate Charge @ Vgs

20 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

2.38mm

Product details

N-Channel MOSFET, 300V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more