Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
3.1 A
Maximum Drain Source Voltage
400 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.8 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.22mm
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
2.38mm
Product details
N-Channel MOSFET, 300V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
BD 3.410
BD 0.341 Each (In a Pack of 10) (Exc. Vat)
BD 3.751
BD 0.375 Each (In a Pack of 10) (inc. VAT)
Standard
10
BD 3.410
BD 0.341 Each (In a Pack of 10) (Exc. Vat)
BD 3.751
BD 0.375 Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 90 | BD 0.341 | BD 3.410 |
| 100 - 240 | BD 0.319 | BD 3.190 |
| 250 - 490 | BD 0.314 | BD 3.135 |
| 500 - 990 | BD 0.280 | BD 2.805 |
| 1000+ | BD 0.270 | BD 2.695 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
3.1 A
Maximum Drain Source Voltage
400 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.8 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.22mm
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
2.38mm
Product details


