Vishay P-Channel MOSFET, 3.6 A, 200 V, 3-Pin DPAK IRFR9220TRPBF

RS Stock No.: 812-0654Brand: VishayManufacturers Part No.: IRFR9220TRPBF
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Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.6 A

Maximum Drain Source Voltage

200 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

42 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Width

6.22mm

Length

6.73mm

Typical Gate Charge @ Vgs

20 nC @ 10 V

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

2.38mm

Country of Origin

China

Product details

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Stock information temporarily unavailable.

BD 3.438

BD 0.688 Each (Supplied as a Tape) (Exc. Vat)

BD 3.782

BD 0.757 Each (Supplied as a Tape) (inc. VAT)

Vishay P-Channel MOSFET, 3.6 A, 200 V, 3-Pin DPAK IRFR9220TRPBF
Select packaging type

BD 3.438

BD 0.688 Each (Supplied as a Tape) (Exc. Vat)

BD 3.782

BD 0.757 Each (Supplied as a Tape) (inc. VAT)

Vishay P-Channel MOSFET, 3.6 A, 200 V, 3-Pin DPAK IRFR9220TRPBF
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

QuantityUnit pricePer Tape
5 - 45BD 0.688BD 3.438
50 - 120BD 0.644BD 3.218
125 - 245BD 0.583BD 2.915
250 - 495BD 0.550BD 2.750
500+BD 0.528BD 2.640

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Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.6 A

Maximum Drain Source Voltage

200 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

42 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Width

6.22mm

Length

6.73mm

Typical Gate Charge @ Vgs

20 nC @ 10 V

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

2.38mm

Country of Origin

China

Product details

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more