Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
200 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Width
6.22mm
Length
6.73mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
2.38mm
Country of Origin
China
Product details
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
BD 3.438
BD 0.688 Each (Supplied as a Tape) (Exc. Vat)
BD 3.782
BD 0.757 Each (Supplied as a Tape) (inc. VAT)
Standard
5
BD 3.438
BD 0.688 Each (Supplied as a Tape) (Exc. Vat)
BD 3.782
BD 0.757 Each (Supplied as a Tape) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Tape |
|---|---|---|
| 5 - 45 | BD 0.688 | BD 3.438 |
| 50 - 120 | BD 0.644 | BD 3.218 |
| 125 - 245 | BD 0.583 | BD 2.915 |
| 250 - 495 | BD 0.550 | BD 2.750 |
| 500+ | BD 0.528 | BD 2.640 |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
200 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Width
6.22mm
Length
6.73mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
2.38mm
Country of Origin
China
Product details


