Vishay N-Channel MOSFET, 2.6 A, 200 V, 3-Pin IPAK IRFU210PBF
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.6 A
Maximum Drain Source Voltage
200 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
8.2 nC @ 10 V
Width
2.38mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.73mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
6.22mm
Product details
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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BD 0.308
BD 0.308 Each (Exc. Vat)
BD 0.339
BD 0.339 Each (inc. VAT)
Standard
1
BD 0.308
BD 0.308 Each (Exc. Vat)
BD 0.339
BD 0.339 Each (inc. VAT)
Standard
1
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Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.6 A
Maximum Drain Source Voltage
200 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
8.2 nC @ 10 V
Width
2.38mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.73mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
6.22mm
Product details
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products