Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
60 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Typical Gate Charge @ Vgs
18 nC @ 5 V
Width
6.29mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Height
3.37mm
Product details
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
BD 0.622
BD 0.622 Each (Exc. Vat)
BD 0.684
BD 0.684 Each (inc. VAT)
Standard
1
BD 0.622
BD 0.622 Each (Exc. Vat)
BD 0.684
BD 0.684 Each (inc. VAT)
Standard
1
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price |
|---|---|
| 1 - 9 | BD 0.622 |
| 10 - 49 | BD 0.544 |
| 50 - 99 | BD 0.517 |
| 100 - 249 | BD 0.506 |
| 250+ | BD 0.484 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
60 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Typical Gate Charge @ Vgs
18 nC @ 5 V
Width
6.29mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Height
3.37mm
Product details



