Technical Document
Specifications
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
190 mA, 300 mA
Maximum Drain Source Voltage
60 V
Package Type
SC-89-6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
3 Ω, 8 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
250 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
1.7mm
Typical Gate Charge @ Vgs
1700 nC @ 15 V, 750 nC @ 4.5 V
Width
1.7mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.6mm
Product details
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Please check again later.
BD 0.190
Each (In a Pack of 20) (Exc. Vat)
BD 0.209
Each (In a Pack of 20) (Including VAT)
20
BD 0.190
Each (In a Pack of 20) (Exc. Vat)
BD 0.209
Each (In a Pack of 20) (Including VAT)
20
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
20 - 180 | BD 0.190 | BD 3.800 |
200 - 480 | BD 0.180 | BD 3.600 |
500 - 980 | BD 0.160 | BD 3.200 |
1000 - 1980 | BD 0.150 | BD 3.000 |
2000+ | BD 0.145 | BD 2.900 |
Technical Document
Specifications
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
190 mA, 300 mA
Maximum Drain Source Voltage
60 V
Package Type
SC-89-6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
3 Ω, 8 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
250 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
1.7mm
Typical Gate Charge @ Vgs
1700 nC @ 15 V, 750 nC @ 4.5 V
Width
1.7mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.6mm
Product details