Vishay N-Channel MOSFET, 200 mA, 20 V, 3-Pin SC-75 SI1032R-T1-GE3
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
20 V
Package Type
SC-75
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
9 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
280 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V, +6 V
Number of Elements per Chip
1
Width
0.86mm
Length
1.68mm
Typical Gate Charge @ Vgs
750 nC @ 4.5 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
0.8mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 8V to 25V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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BD 214.500
BD 0.072 Each (On a Reel of 3000) (Exc. Vat)
BD 235.950
BD 0.079 Each (On a Reel of 3000) (inc. VAT)
3000
BD 214.500
BD 0.072 Each (On a Reel of 3000) (Exc. Vat)
BD 235.950
BD 0.079 Each (On a Reel of 3000) (inc. VAT)
3000
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Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
20 V
Package Type
SC-75
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
9 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
280 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V, +6 V
Number of Elements per Chip
1
Width
0.86mm
Length
1.68mm
Typical Gate Charge @ Vgs
750 nC @ 4.5 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
0.8mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 8V to 25V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products