Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
760 mA
Maximum Drain Source Voltage
30 V
Package Type
SC-89-6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
244 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.7V
Maximum Power Dissipation
236 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Transistor Material
Si
Width
1.2mm
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
4.43 nC @ 4.5 V
Length
1.7mm
Minimum Operating Temperature
-55 °C
Height
0.6mm
Product details
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
BD 2.750
BD 0.138 Each (Supplied as a Tape) (Exc. Vat)
BD 3.025
BD 0.152 Each (Supplied as a Tape) (inc. VAT)
Standard
20
BD 2.750
BD 0.138 Each (Supplied as a Tape) (Exc. Vat)
BD 3.025
BD 0.152 Each (Supplied as a Tape) (inc. VAT)
Stock information temporarily unavailable.
Standard
20
Stock information temporarily unavailable.
| Quantity | Unit price | Per Tape |
|---|---|---|
| 20 - 180 | BD 0.138 | BD 2.750 |
| 200 - 980 | BD 0.132 | BD 2.640 |
| 1000 - 1980 | BD 0.121 | BD 2.420 |
| 2000 - 4980 | BD 0.116 | BD 2.310 |
| 5000+ | BD 0.110 | BD 2.200 |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
760 mA
Maximum Drain Source Voltage
30 V
Package Type
SC-89-6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
244 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.7V
Maximum Power Dissipation
236 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Transistor Material
Si
Width
1.2mm
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
4.43 nC @ 4.5 V
Length
1.7mm
Minimum Operating Temperature
-55 °C
Height
0.6mm
Product details


