P-Channel MOSFET, 1.1 A, 20 V, 3-Pin SOT-323 Vishay SI1317DL-T1-GE3
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
1.1 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-323 (SC-70)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.45V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
4.3 nC @ 4.5 V
Width
1.35mm
Transistor Material
Si
Minimum Operating Temperature
-50 °C
Height
1mm
Product details
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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BD 0.065
Each (Supplied on a Reel) (Exc. Vat)
BD 0.071
Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
50
BD 0.065
Each (Supplied on a Reel) (Exc. Vat)
BD 0.071
Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
50
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
1.1 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-323 (SC-70)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.45V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
4.3 nC @ 4.5 V
Width
1.35mm
Transistor Material
Si
Minimum Operating Temperature
-50 °C
Height
1mm
Product details
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products