Vishay SI2122DS N-Channel MOSFET, 2.17 A, 100 V, 3-Pin PowerPAK SI2122DS-T1-GE3
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.17 A
Maximum Drain Source Voltage
100 V
Series
SI2122DS
Package Type
PowerPAK
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Transistor Material
Si
Number of Elements per Chip
1
Country of Origin
China
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BD 0.148
BD 0.148 Each (Supplied as a Tape) (Exc. Vat)
BD 0.163
BD 0.163 Each (Supplied as a Tape) (inc. VAT)
1
BD 0.148
BD 0.148 Each (Supplied as a Tape) (Exc. Vat)
BD 0.163
BD 0.163 Each (Supplied as a Tape) (inc. VAT)
1
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| Quantity | Unit price |
|---|---|
| 1 - 24 | BD 0.148 |
| 25 - 99 | BD 0.132 |
| 100 - 499 | BD 0.121 |
| 500 - 999 | BD 0.104 |
| 1000+ | BD 0.094 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.17 A
Maximum Drain Source Voltage
100 V
Series
SI2122DS
Package Type
PowerPAK
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Transistor Material
Si
Number of Elements per Chip
1
Country of Origin
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products