Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
2.3 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
112 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
860 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Transistor Material
Si
Typical Gate Charge @ Vgs
3.3 nC @ 2.5 V, 5.5 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Width
1.4mm
Minimum Operating Temperature
-55 °C
Height
1.02mm
Country of Origin
China
Product details
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Stock information temporarily unavailable.
Please check again later.
BD 0.165
Each (Supplied on a Reel) (Exc. Vat)
BD 0.181
Each (Supplied on a Reel) (Including VAT)
20
BD 0.165
Each (Supplied on a Reel) (Exc. Vat)
BD 0.181
Each (Supplied on a Reel) (Including VAT)
20
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
20 - 180 | BD 0.165 | BD 3.300 |
200 - 480 | BD 0.130 | BD 2.600 |
500 - 980 | BD 0.100 | BD 2.000 |
1000 - 1980 | BD 0.085 | BD 1.700 |
2000+ | BD 0.075 | BD 1.500 |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
2.3 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
112 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
860 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Transistor Material
Si
Typical Gate Charge @ Vgs
3.3 nC @ 2.5 V, 5.5 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Width
1.4mm
Minimum Operating Temperature
-55 °C
Height
1.02mm
Country of Origin
China
Product details