Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
75 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Width
1.4mm
Number of Elements per Chip
1
Length
3.04mm
Typical Gate Charge @ Vgs
4.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1.02mm
Country of Origin
China
Product details
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
BD 6.050
BD 0.121 Each (In a Pack of 50) (Exc. Vat)
BD 6.655
BD 0.133 Each (In a Pack of 50) (inc. VAT)
Standard
50
BD 6.050
BD 0.121 Each (In a Pack of 50) (Exc. Vat)
BD 6.655
BD 0.133 Each (In a Pack of 50) (inc. VAT)
Standard
50
Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price | Per Pack |
---|---|---|
50 - 450 | BD 0.121 | BD 6.050 |
500 - 1200 | BD 0.082 | BD 4.125 |
1250 - 2450 | BD 0.066 | BD 3.300 |
2500 - 4950 | BD 0.060 | BD 3.025 |
5000+ | BD 0.055 | BD 2.750 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
75 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Width
1.4mm
Number of Elements per Chip
1
Length
3.04mm
Typical Gate Charge @ Vgs
4.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1.02mm
Country of Origin
China
Product details