Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
5.6 A
Maximum Drain Source Voltage
40 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
51 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
5.8 nC @ 10 V
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.02mm
Product details
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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BD 0.150
Each (Supplied on a Reel) (Exc. Vat)
BD 0.165
Each (Supplied on a Reel) (Including VAT)
20
BD 0.150
Each (Supplied on a Reel) (Exc. Vat)
BD 0.165
Each (Supplied on a Reel) (Including VAT)
20
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
20 - 180 | BD 0.150 | BD 3.000 |
200 - 480 | BD 0.145 | BD 2.900 |
500 - 980 | BD 0.130 | BD 2.600 |
1000 - 1980 | BD 0.120 | BD 2.400 |
2000+ | BD 0.115 | BD 2.300 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
5.6 A
Maximum Drain Source Voltage
40 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
51 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
5.8 nC @ 10 V
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.02mm
Product details