Vishay P-Channel MOSFET, 6 A, 12 V, 3-Pin SOT-23 SI2333DDS-T1-GE3

Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
12 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
19 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Typical Gate Charge @ Vgs
23 nC @ 8 V
Maximum Operating Temperature
+150 °C
Height
1.02mm
Minimum Operating Temperature
-55 °C
Product details
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
BD 1.925
BD 0.192 Each (In a Pack of 10) (Exc. Vat)
BD 2.117
BD 0.211 Each (In a Pack of 10) (inc. VAT)
Standard
10
BD 1.925
BD 0.192 Each (In a Pack of 10) (Exc. Vat)
BD 2.117
BD 0.211 Each (In a Pack of 10) (inc. VAT)
Stock information temporarily unavailable.
Standard
10
Stock information temporarily unavailable.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 90 | BD 0.192 | BD 1.925 |
| 100 - 490 | BD 0.187 | BD 1.870 |
| 500 - 990 | BD 0.170 | BD 1.705 |
| 1000 - 2490 | BD 0.165 | BD 1.650 |
| 2500+ | BD 0.154 | BD 1.540 |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
12 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
19 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Typical Gate Charge @ Vgs
23 nC @ 8 V
Maximum Operating Temperature
+150 °C
Height
1.02mm
Minimum Operating Temperature
-55 °C
Product details

