Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
4.7 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
67.5 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
23.8 nC @ 8 V
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-50 °C
Height
1.02mm
Country of Origin
China
Product details
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Stock information temporarily unavailable.
Please check again later.
BD 0.130
Each (In a Pack of 50) (Exc. Vat)
BD 0.143
Each (In a Pack of 50) (Including VAT)
50
BD 0.130
Each (In a Pack of 50) (Exc. Vat)
BD 0.143
Each (In a Pack of 50) (Including VAT)
50
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
50 - 450 | BD 0.130 | BD 6.500 |
500 - 1200 | BD 0.090 | BD 4.500 |
1250 - 2450 | BD 0.070 | BD 3.500 |
2500 - 4950 | BD 0.065 | BD 3.250 |
5000+ | BD 0.055 | BD 2.750 |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
4.7 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
67.5 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
23.8 nC @ 8 V
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-50 °C
Height
1.02mm
Country of Origin
China
Product details