Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
165 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Length
3.04mm
Typical Gate Charge @ Vgs
14 nC @ 8 V
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.02mm
Country of Origin
China
Product details
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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BD 0.165
Each (In a Pack of 20) (Exc. Vat)
BD 0.181
Each (In a Pack of 20) (Including VAT)
20
BD 0.165
Each (In a Pack of 20) (Exc. Vat)
BD 0.181
Each (In a Pack of 20) (Including VAT)
20
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
20 - 180 | BD 0.165 | BD 3.300 |
200 - 480 | BD 0.125 | BD 2.500 |
500 - 980 | BD 0.115 | BD 2.300 |
1000 - 1980 | BD 0.100 | BD 2.000 |
2000+ | BD 0.085 | BD 1.700 |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
165 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Length
3.04mm
Typical Gate Charge @ Vgs
14 nC @ 8 V
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.02mm
Country of Origin
China
Product details