Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6.2 A
Maximum Drain Source Voltage
12 V
Package Type
TSOP
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
68 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Maximum Operating Temperature
+150 °C
Length
3.1mm
Typical Gate Charge @ Vgs
20 nC @ 8 V
Width
1.7mm
Number of Elements per Chip
1
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Country of Origin
China
Product details
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
BD 4.510
BD 0.226 Each (Supplied as a Tape) (Exc. Vat)
BD 4.961
BD 0.249 Each (Supplied as a Tape) (inc. VAT)
Standard
20
BD 4.510
BD 0.226 Each (Supplied as a Tape) (Exc. Vat)
BD 4.961
BD 0.249 Each (Supplied as a Tape) (inc. VAT)
Stock information temporarily unavailable.
Standard
20
Stock information temporarily unavailable.
| Quantity | Unit price | Per Tape |
|---|---|---|
| 20 - 20 | BD 0.226 | BD 4.510 |
| 40 - 180 | BD 0.192 | BD 3.850 |
| 200 - 380 | BD 0.165 | BD 3.300 |
| 400 - 780 | BD 0.154 | BD 3.080 |
| 800+ | BD 0.138 | BD 2.750 |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6.2 A
Maximum Drain Source Voltage
12 V
Package Type
TSOP
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
68 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Maximum Operating Temperature
+150 °C
Length
3.1mm
Typical Gate Charge @ Vgs
20 nC @ 8 V
Width
1.7mm
Number of Elements per Chip
1
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Country of Origin
China
Product details


