Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
20 V
Package Type
TSOP-6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
51 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
3.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.7mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.1mm
Typical Gate Charge @ Vgs
34.8 nC @ -8 V
Height
1mm
Series
TrenchFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Product details
P-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Please check again later.
BD 0.145
Each (In a Pack of 25) (Exc. Vat)
BD 0.159
Each (In a Pack of 25) (Including VAT)
25
BD 0.145
Each (In a Pack of 25) (Exc. Vat)
BD 0.159
Each (In a Pack of 25) (Including VAT)
25
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
25 - 225 | BD 0.145 | BD 3.625 |
250 - 600 | BD 0.135 | BD 3.375 |
625 - 1225 | BD 0.125 | BD 3.125 |
1250 - 2475 | BD 0.115 | BD 2.875 |
2500+ | BD 0.110 | BD 2.750 |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
20 V
Package Type
TSOP-6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
51 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
3.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.7mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.1mm
Typical Gate Charge @ Vgs
34.8 nC @ -8 V
Height
1mm
Series
TrenchFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Product details