Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
11.1 A
Maximum Drain Source Voltage
100 V
Series
ThunderFET
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
31 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
5.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
19.6 nC @ 10 V
Width
4mm
Minimum Operating Temperature
-55 °C
Height
1.5mm
Product details
N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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BD 1.900
BD 0.380 Each (In a Pack of 5) (Exc. Vat)
BD 2.090
BD 0.418 Each (In a Pack of 5) (inc. VAT)
Standard
5
BD 1.900
BD 0.380 Each (In a Pack of 5) (Exc. Vat)
BD 2.090
BD 0.418 Each (In a Pack of 5) (inc. VAT)
Standard
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | BD 0.380 | BD 1.900 |
50 - 245 | BD 0.330 | BD 1.650 |
250 - 495 | BD 0.275 | BD 1.375 |
500 - 1245 | BD 0.265 | BD 1.325 |
1250+ | BD 0.255 | BD 1.275 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
11.1 A
Maximum Drain Source Voltage
100 V
Series
ThunderFET
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
31 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
5.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
19.6 nC @ 10 V
Width
4mm
Minimum Operating Temperature
-55 °C
Height
1.5mm
Product details