Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
11.1 A
Maximum Drain Source Voltage
100 V
Series
ThunderFET
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
31 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
5.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
19.6 nC @ 10 V
Width
4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.5mm
Country of Origin
Taiwan, Province Of China
Product details
N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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BD 437.500
BD 0.175 Each (On a Reel of 2500) (Exc. Vat)
BD 481.250
BD 0.193 Each (On a Reel of 2500) (inc. VAT)
2500
BD 437.500
BD 0.175 Each (On a Reel of 2500) (Exc. Vat)
BD 481.250
BD 0.193 Each (On a Reel of 2500) (inc. VAT)
2500
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
11.1 A
Maximum Drain Source Voltage
100 V
Series
ThunderFET
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
31 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
5.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
19.6 nC @ 10 V
Width
4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.5mm
Country of Origin
Taiwan, Province Of China
Product details