Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
100 V
Series
ThunderFET
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
12 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
7.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Typical Gate Charge @ Vgs
45.6 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.5mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
BD 2.915
BD 0.583 Each (In a Pack of 5) (Exc. Vat)
BD 3.207
BD 0.641 Each (In a Pack of 5) (inc. VAT)
Standard
5
BD 2.915
BD 0.583 Each (In a Pack of 5) (Exc. Vat)
BD 3.207
BD 0.641 Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 45 | BD 0.583 | BD 2.915 |
| 50 - 120 | BD 0.572 | BD 2.860 |
| 125 - 245 | BD 0.440 | BD 2.200 |
| 250 - 495 | BD 0.368 | BD 1.842 |
| 500+ | BD 0.297 | BD 1.485 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
100 V
Series
ThunderFET
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
12 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
7.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Typical Gate Charge @ Vgs
45.6 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.5mm
Minimum Operating Temperature
-55 °C
Product details


