Vishay ThunderFET N-Channel MOSFET, 20 A, 100 V, 8-Pin SOIC SI4090DY-T1-GE3

RS Stock No.: 787-9131Brand: VishayManufacturers Part No.: SI4090DY-T1-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

100 V

Series

ThunderFET

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

12 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

7.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

45.6 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.5mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Stock information temporarily unavailable.

BD 2.915

BD 0.583 Each (In a Pack of 5) (Exc. Vat)

BD 3.207

BD 0.641 Each (In a Pack of 5) (inc. VAT)

Vishay ThunderFET N-Channel MOSFET, 20 A, 100 V, 8-Pin SOIC SI4090DY-T1-GE3
Select packaging type

BD 2.915

BD 0.583 Each (In a Pack of 5) (Exc. Vat)

BD 3.207

BD 0.641 Each (In a Pack of 5) (inc. VAT)

Vishay ThunderFET N-Channel MOSFET, 20 A, 100 V, 8-Pin SOIC SI4090DY-T1-GE3
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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QuantityUnit pricePer Pack
5 - 45BD 0.583BD 2.915
50 - 120BD 0.572BD 2.860
125 - 245BD 0.440BD 2.200
250 - 495BD 0.368BD 1.842
500+BD 0.297BD 1.485

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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

100 V

Series

ThunderFET

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

12 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

7.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

45.6 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.5mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more