Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
9.9 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
5mm
Width
4mm
Typical Gate Charge @ Vgs
15.4 nC @ 10 V, 7.3 nC @ 4.5 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
1.5mm
Country of Origin
China
Product details
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Please check again later.
BD 0.305
Each (In a Pack of 10) (Exc. Vat)
BD 0.335
Each (In a Pack of 10) (Including VAT)
10
BD 0.305
Each (In a Pack of 10) (Exc. Vat)
BD 0.335
Each (In a Pack of 10) (Including VAT)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 90 | BD 0.305 | BD 3.050 |
100 - 240 | BD 0.285 | BD 2.850 |
250 - 490 | BD 0.260 | BD 2.600 |
500 - 990 | BD 0.245 | BD 2.450 |
1000+ | BD 0.230 | BD 2.300 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
9.9 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
5mm
Width
4mm
Typical Gate Charge @ Vgs
15.4 nC @ 10 V, 7.3 nC @ 4.5 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
1.5mm
Country of Origin
China
Product details