Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
33 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
7.5 nC @ 10 V
Width
4mm
Minimum Operating Temperature
-55 °C
Height
1.55mm
Country of Origin
China
Product details
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Please check again later.
BD 0.235
Each (Supplied on a Reel) (Exc. Vat)
BD 0.259
Each (Supplied on a Reel) (Including VAT)
20
BD 0.235
Each (Supplied on a Reel) (Exc. Vat)
BD 0.259
Each (Supplied on a Reel) (Including VAT)
20
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
20 - 180 | BD 0.235 | BD 4.700 |
200 - 480 | BD 0.190 | BD 3.800 |
500 - 980 | BD 0.175 | BD 3.500 |
1000 - 1980 | BD 0.155 | BD 3.100 |
2000+ | BD 0.130 | BD 2.600 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
33 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
7.5 nC @ 10 V
Width
4mm
Minimum Operating Temperature
-55 °C
Height
1.55mm
Country of Origin
China
Product details