Technical Document
Specifications
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
4.3 A, 6 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
65 mΩ, 140 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.78 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
6 nC @ 10 V, 7.8 nC @ 10 V
Width
4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.5mm
Product details
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Please check again later.
BD 0.240
Each (In a Pack of 20) (Exc. Vat)
BD 0.264
Each (In a Pack of 20) (Including VAT)
20
BD 0.240
Each (In a Pack of 20) (Exc. Vat)
BD 0.264
Each (In a Pack of 20) (Including VAT)
20
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
20 - 180 | BD 0.240 | BD 4.800 |
200 - 480 | BD 0.205 | BD 4.100 |
500 - 980 | BD 0.190 | BD 3.800 |
1000 - 1980 | BD 0.180 | BD 3.600 |
2000+ | BD 0.170 | BD 3.400 |
Technical Document
Specifications
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
4.3 A, 6 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
65 mΩ, 140 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.78 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
6 nC @ 10 V, 7.8 nC @ 10 V
Width
4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.5mm
Product details