Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
40 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.56 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
18.5 nC @ 5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Width
4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.55mm
Product details
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Please check again later.
BD 0.785
Each (Supplied on a Reel) (Exc. Vat)
BD 0.863
Each (Supplied on a Reel) (Including VAT)
5
BD 0.785
Each (Supplied on a Reel) (Exc. Vat)
BD 0.863
Each (Supplied on a Reel) (Including VAT)
5
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
5 - 45 | BD 0.785 | BD 3.925 |
50 - 120 | BD 0.740 | BD 3.700 |
125 - 245 | BD 0.670 | BD 3.350 |
250 - 495 | BD 0.630 | BD 3.150 |
500+ | BD 0.595 | BD 2.975 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
40 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.56 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
18.5 nC @ 5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Width
4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.55mm
Product details