Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
9.6 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
26 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
27.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Length
3.15mm
Typical Gate Charge @ Vgs
33 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
3.15mm
Transistor Material
Si
Number of Elements per Chip
1
Height
1.07mm
Minimum Operating Temperature
-50 °C
Country of Origin
China
Product details
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Stock information temporarily unavailable.
BD 5.060
BD 0.506 Each (In a Pack of 10) (Exc. Vat)
BD 5.566
BD 0.557 Each (In a Pack of 10) (inc. VAT)
Standard
10
BD 5.060
BD 0.506 Each (In a Pack of 10) (Exc. Vat)
BD 5.566
BD 0.557 Each (In a Pack of 10) (inc. VAT)
Stock information temporarily unavailable.
Standard
10
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 90 | BD 0.506 | BD 5.060 |
| 100 - 240 | BD 0.407 | BD 4.070 |
| 250 - 490 | BD 0.314 | BD 3.135 |
| 500 - 990 | BD 0.280 | BD 2.805 |
| 1000+ | BD 0.242 | BD 2.420 |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
9.6 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
26 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
27.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Length
3.15mm
Typical Gate Charge @ Vgs
33 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
3.15mm
Transistor Material
Si
Number of Elements per Chip
1
Height
1.07mm
Minimum Operating Temperature
-50 °C
Country of Origin
China
Product details


