Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
6.2 A
Maximum Drain Source Voltage
60 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
22 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.89mm
Transistor Material
Si
Number of Elements per Chip
1
Length
4.9mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
18 nC @ 10 V
Height
1.04mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
BD 4.702
BD 0.940 Each (In a Pack of 5) (Exc. Vat)
BD 5.172
BD 1.034 Each (In a Pack of 5) (inc. VAT)
Standard
5
BD 4.702
BD 0.940 Each (In a Pack of 5) (Exc. Vat)
BD 5.172
BD 1.034 Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5
Stock information temporarily unavailable.
Quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | BD 0.940 | BD 4.702 |
50 - 120 | BD 0.798 | BD 3.988 |
125 - 245 | BD 0.698 | BD 3.492 |
250 - 495 | BD 0.583 | BD 2.915 |
500+ | BD 0.473 | BD 2.365 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
6.2 A
Maximum Drain Source Voltage
60 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
22 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.89mm
Transistor Material
Si
Number of Elements per Chip
1
Length
4.9mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
18 nC @ 10 V
Height
1.04mm
Minimum Operating Temperature
-55 °C
Product details