Vishay E N-Channel MOSFET, 7.5 A, 800 V, 3-Pin TO-220 FP SIHA21N80AE-GE3

RS Stock No.: 210-4965Brand: VishayManufacturers Part No.: SIHA21N80AE-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

7.5 A

Maximum Drain Source Voltage

800 V

Series

E

Package Type

TO-220 FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.205 Ω

Maximum Gate Threshold Voltage

2 → 4V

Number of Elements per Chip

1

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Stock information temporarily unavailable.

BD 4.262

BD 0.852 Each (In a Pack of 5) (Exc. Vat)

BD 4.688

BD 0.937 Each (In a Pack of 5) (inc. VAT)

Vishay E N-Channel MOSFET, 7.5 A, 800 V, 3-Pin TO-220 FP SIHA21N80AE-GE3
Select packaging type

BD 4.262

BD 0.852 Each (In a Pack of 5) (Exc. Vat)

BD 4.688

BD 0.937 Each (In a Pack of 5) (inc. VAT)

Vishay E N-Channel MOSFET, 7.5 A, 800 V, 3-Pin TO-220 FP SIHA21N80AE-GE3
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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QuantityUnit pricePer Pack
5 - 45BD 0.852BD 4.262
50 - 120BD 0.764BD 3.822
125 - 245BD 0.676BD 3.382
250 - 495BD 0.638BD 3.190
500+BD 0.556BD 2.778

Ideate. Create. Collaborate

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  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

7.5 A

Maximum Drain Source Voltage

800 V

Series

E

Package Type

TO-220 FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.205 Ω

Maximum Gate Threshold Voltage

2 → 4V

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more