Technical Document
Specifications
Brand
VishayProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
21A
Maximum Drain Source Voltage Vds
600V
Series
E
Package Type
TO-220
Maximum Drain Source Resistance Rds
0.18Ω
Typical Gate Charge Qg @ Vgs
86nC
Maximum Power Dissipation Pd
35W
Maximum Gate Source Voltage Vgs
±30 V
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.2V
Maximum Operating Temperature
150°C
Transistor Configuration
Single
Width
10.3 mm
Length
13.8mm
Standards/Approvals
No
Automotive Standard
No
Country of Origin
China
Stock information temporarily unavailable.
BD 61.050
BD 1.221 Each (In a Tube of 50) (Exc. Vat)
BD 67.155
BD 1.343 Each (In a Tube of 50) (inc. VAT)
50
BD 61.050
BD 1.221 Each (In a Tube of 50) (Exc. Vat)
BD 67.155
BD 1.343 Each (In a Tube of 50) (inc. VAT)
Stock information temporarily unavailable.
50
| Quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | BD 1.221 | BD 61.050 |
| 100 - 200 | BD 1.150 | BD 57.475 |
| 250+ | BD 1.040 | BD 51.975 |
Technical Document
Specifications
Brand
VishayProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
21A
Maximum Drain Source Voltage Vds
600V
Series
E
Package Type
TO-220
Maximum Drain Source Resistance Rds
0.18Ω
Typical Gate Charge Qg @ Vgs
86nC
Maximum Power Dissipation Pd
35W
Maximum Gate Source Voltage Vgs
±30 V
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.2V
Maximum Operating Temperature
150°C
Transistor Configuration
Single
Width
10.3 mm
Length
13.8mm
Standards/Approvals
No
Automotive Standard
No
Country of Origin
China


