N-Channel MOSFET, 8 A, 800 V, 3-Pin D2PAK Vishay SIHB11N80AE-GE3
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
800 V
Series
E
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.391 Ω
Maximum Gate Threshold Voltage
2 → 4V
Number of Elements per Chip
1
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BD 0.725
Each (In a Tube of 50) (Exc. Vat)
BD 0.797
Each (In a Tube of 50) (inc. VAT)
50
BD 0.725
Each (In a Tube of 50) (Exc. Vat)
BD 0.797
Each (In a Tube of 50) (inc. VAT)
50
Buy in bulk
| quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | BD 0.725 | BD 36.250 |
| 100 - 200 | BD 0.690 | BD 34.500 |
| 250+ | BD 0.650 | BD 32.500 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
800 V
Series
E
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.391 Ω
Maximum Gate Threshold Voltage
2 → 4V
Number of Elements per Chip
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products