Vishay EF N-Channel MOSFET, 8.4 A, 600 V, 3-Pin D2PAK SiHB186N60EF-GE3

RS Stock No.: 210-4975Brand: VishayManufacturers Part No.: SiHB186N60EF-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

8.4 A

Maximum Drain Source Voltage

600 V

Package Type

D2PAK (TO-263)

Series

EF

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.168 Ω

Maximum Gate Threshold Voltage

3 → 5V

Number of Elements per Chip

1

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Stock information temporarily unavailable.

BD 8.965

BD 1.793 Each (In a Pack of 5) (Exc. Vat)

BD 9.861

BD 1.972 Each (In a Pack of 5) (inc. VAT)

Vishay EF N-Channel MOSFET, 8.4 A, 600 V, 3-Pin D2PAK SiHB186N60EF-GE3
Select packaging type

BD 8.965

BD 1.793 Each (In a Pack of 5) (Exc. Vat)

BD 9.861

BD 1.972 Each (In a Pack of 5) (inc. VAT)

Vishay EF N-Channel MOSFET, 8.4 A, 600 V, 3-Pin D2PAK SiHB186N60EF-GE3
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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QuantityUnit pricePer Pack
5 - 45BD 1.793BD 8.965
50 - 120BD 1.612BD 8.058
125 - 245BD 1.430BD 7.150
250 - 495BD 1.326BD 6.628
500+BD 1.160BD 5.802

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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

8.4 A

Maximum Drain Source Voltage

600 V

Package Type

D2PAK (TO-263)

Series

EF

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.168 Ω

Maximum Gate Threshold Voltage

3 → 5V

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more