Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
28 A
Maximum Drain Source Voltage
600 V
Package Type
D2PAK (TO-263)
Series
EF Series
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
123 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Length
10.67mm
Typical Gate Charge @ Vgs
80 nC @ 10 V
Width
9.65mm
Transistor Material
Si
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
4.83mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor
Reduced Reverse Recovery Time, Reverse Recovery Charge, and Reverse Recovery Current
Low figure-of-merit (FOM)
Low input capacitance (Ciss)
Increased robustness due to low Reverse Recovery Charge
Ultra low gate charge (Qg)
MOSFET Transistors, Vishay Semiconductor
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BD 1.275
Each (Supplied in a Tube) (Exc. Vat)
BD 1.403
Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
2
BD 1.275
Each (Supplied in a Tube) (Exc. Vat)
BD 1.403
Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
2
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
28 A
Maximum Drain Source Voltage
600 V
Package Type
D2PAK (TO-263)
Series
EF Series
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
123 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Length
10.67mm
Typical Gate Charge @ Vgs
80 nC @ 10 V
Width
9.65mm
Transistor Material
Si
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
4.83mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor
Reduced Reverse Recovery Time, Reverse Recovery Charge, and Reverse Recovery Current
Low figure-of-merit (FOM)
Low input capacitance (Ciss)
Increased robustness due to low Reverse Recovery Charge
Ultra low gate charge (Qg)