Vishay E-Series N-Channel MOSFET, 4.4 A, 800 V, 3-Pin D2PAK SIHB5N80AE-GE3

RS Stock No.: 225-9912Brand: VishayManufacturers Part No.: SIHB5N80AE-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

4.4 A

Maximum Drain Source Voltage

800 V

Series

E-Series

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.3 Ω

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

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BD 7.755

BD 0.776 Each (In a Pack of 10) (Exc. Vat)

BD 8.531

BD 0.854 Each (In a Pack of 10) (inc. VAT)

Vishay E-Series N-Channel MOSFET, 4.4 A, 800 V, 3-Pin D2PAK SIHB5N80AE-GE3
Select packaging type

BD 7.755

BD 0.776 Each (In a Pack of 10) (Exc. Vat)

BD 8.531

BD 0.854 Each (In a Pack of 10) (inc. VAT)

Vishay E-Series N-Channel MOSFET, 4.4 A, 800 V, 3-Pin D2PAK SIHB5N80AE-GE3

Stock information temporarily unavailable.

Select packaging type

Stock information temporarily unavailable.

QuantityUnit pricePer Pack
10 - 90BD 0.776BD 7.755
100 - 240BD 0.742BD 7.425
250 - 490BD 0.654BD 6.545
500 - 990BD 0.627BD 6.270
1000+BD 0.600BD 5.995

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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

4.4 A

Maximum Drain Source Voltage

800 V

Series

E-Series

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.3 Ω

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more