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N-Channel MOSFET, 8 A, 800 V, 3-Pin DPAK Vishay SIHD11N80AE-GE3

RS Stock No.: 210-4978Brand: VishayManufacturers Part No.: SIHD11N80AE-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

800 V

Package Type

DPAK (TO-252)

Series

E

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.391 Ω

Maximum Gate Threshold Voltage

2 → 4V

Number of Elements per Chip

1

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BD 1,170.000

BD 0.390 Each (On a Reel of 3000) (Exc. Vat)

BD 1,287.000

BD 0.429 Each (On a Reel of 3000) (inc. VAT)

N-Channel MOSFET, 8 A, 800 V, 3-Pin DPAK Vishay SIHD11N80AE-GE3

BD 1,170.000

BD 0.390 Each (On a Reel of 3000) (Exc. Vat)

BD 1,287.000

BD 0.429 Each (On a Reel of 3000) (inc. VAT)

N-Channel MOSFET, 8 A, 800 V, 3-Pin DPAK Vishay SIHD11N80AE-GE3
Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

800 V

Package Type

DPAK (TO-252)

Series

E

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.391 Ω

Maximum Gate Threshold Voltage

2 → 4V

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more