Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
200 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.67mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
9.65mm
Transistor Material
Si
Number of Elements per Chip
1
Height
4.83mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
BD 4.235
BD 0.424 Each (In a Pack of 10) (Exc. Vat)
BD 4.659
BD 0.466 Each (In a Pack of 10) (inc. VAT)
Standard
10
BD 4.235
BD 0.424 Each (In a Pack of 10) (Exc. Vat)
BD 4.659
BD 0.466 Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
10 - 90 | BD 0.424 | BD 4.235 |
100 - 240 | BD 0.324 | BD 3.245 |
250 - 490 | BD 0.270 | BD 2.695 |
500 - 990 | BD 0.248 | BD 2.475 |
1000+ | BD 0.236 | BD 2.365 |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
200 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.67mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
9.65mm
Transistor Material
Si
Number of Elements per Chip
1
Height
4.83mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details