Vishay E Series Dual N-Channel MOSFET, 35 A, 650 V, 3-Pin TO-247AC SiHG080N60E-GE3

RS Stock No.: 228-2863Brand: VishayManufacturers Part No.: SiHG080N60E-GE3
brand-logo
View all in MOSFETs

Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

650 V

Series

E Series

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.08 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

2

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

BD 37.538

BD 1.502 Each (In a Tube of 25) (Exc. Vat)

BD 41.292

BD 1.652 Each (In a Tube of 25) (inc. VAT)

Vishay E Series Dual N-Channel MOSFET, 35 A, 650 V, 3-Pin TO-247AC SiHG080N60E-GE3

BD 37.538

BD 1.502 Each (In a Tube of 25) (Exc. Vat)

BD 41.292

BD 1.652 Each (In a Tube of 25) (inc. VAT)

Vishay E Series Dual N-Channel MOSFET, 35 A, 650 V, 3-Pin TO-247AC SiHG080N60E-GE3

Stock information temporarily unavailable.

Stock information temporarily unavailable.

QuantityUnit pricePer Tube
25 - 25BD 1.502BD 37.538
50 - 100BD 1.468BD 36.712
125+BD 1.408BD 35.200

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

650 V

Series

E Series

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.08 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

2

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more