Vishay E N-Channel MOSFET, 8 A, 800 V, 3-Pin TO-247AC SIHG11N80AE-GE3

RS Stock No.: 210-4981Brand: VishayManufacturers Part No.: SIHG11N80AE-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

800 V

Package Type

TO-247AC

Series

E

Pin Count

3

Maximum Drain Source Resistance

0.391 Ω

Maximum Gate Threshold Voltage

2 → 4V

Number of Elements per Chip

1

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Stock information temporarily unavailable.

BD 27.362

BD 1.094 Each (In a Tube of 25) (Exc. Vat)

BD 30.098

BD 1.203 Each (In a Tube of 25) (inc. VAT)

Vishay E N-Channel MOSFET, 8 A, 800 V, 3-Pin TO-247AC SIHG11N80AE-GE3

BD 27.362

BD 1.094 Each (In a Tube of 25) (Exc. Vat)

BD 30.098

BD 1.203 Each (In a Tube of 25) (inc. VAT)

Vishay E N-Channel MOSFET, 8 A, 800 V, 3-Pin TO-247AC SIHG11N80AE-GE3
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

QuantityUnit pricePer Tube
25 - 25BD 1.094BD 27.362
50 - 100BD 1.034BD 25.850
125+BD 0.952BD 23.788

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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

800 V

Package Type

TO-247AC

Series

E

Pin Count

3

Maximum Drain Source Resistance

0.391 Ω

Maximum Gate Threshold Voltage

2 → 4V

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more