Vishay E Series Dual N-Channel MOSFET, 21 A, 850 V, 3-Pin TO-247AC SIHG24N80AE-GE3

RS Stock No.: 228-2869Brand: VishayManufacturers Part No.: SIHG24N80AE-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

21 A

Maximum Drain Source Voltage

850 V

Series

E Series

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.184 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

2

Transistor Material

Si

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BD 34.512

BD 1.380 Each (In a Tube of 25) (Exc. Vat)

BD 37.963

BD 1.518 Each (In a Tube of 25) (inc. VAT)

Vishay E Series Dual N-Channel MOSFET, 21 A, 850 V, 3-Pin TO-247AC SIHG24N80AE-GE3

BD 34.512

BD 1.380 Each (In a Tube of 25) (Exc. Vat)

BD 37.963

BD 1.518 Each (In a Tube of 25) (inc. VAT)

Vishay E Series Dual N-Channel MOSFET, 21 A, 850 V, 3-Pin TO-247AC SIHG24N80AE-GE3

Stock information temporarily unavailable.

Stock information temporarily unavailable.

QuantityUnit pricePer Tube
25 - 25BD 1.380BD 34.512
50 - 100BD 1.298BD 32.450
125+BD 1.194BD 29.838

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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

21 A

Maximum Drain Source Voltage

850 V

Series

E Series

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.184 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

2

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more