Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
400 V
Series
D Series
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.65mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.51mm
Typical Gate Charge @ Vgs
9 nC @ 10 V
Height
9.01mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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BD 12.250
BD 0.245 Each (In a Tube of 50) (Exc. Vat)
BD 13.475
BD 0.269 Each (In a Tube of 50) (inc. VAT)
50
BD 12.250
BD 0.245 Each (In a Tube of 50) (Exc. Vat)
BD 13.475
BD 0.269 Each (In a Tube of 50) (inc. VAT)
50
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
50 - 50 | BD 0.245 | BD 12.250 |
100 - 200 | BD 0.200 | BD 10.000 |
250+ | BD 0.180 | BD 9.000 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
400 V
Series
D Series
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.65mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.51mm
Typical Gate Charge @ Vgs
9 nC @ 10 V
Height
9.01mm
Minimum Operating Temperature
-55 °C
Product details